Title :
p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers
Author :
Hahn, Herwig ; Reuters, B. ; Pooth, A. ; Hollander, B. ; Heuken, M. ; Kalisch, Holger ; Vescan, Andrei
Author_Institution :
GaN Device Technol., RWTH Aachen Univ., Aachen, Germany
Abstract :
Within the last years, III-nitride-based devices have been demonstrated with exceptional performance. There is, however, a severe lack of knowledge when it comes fabrication of p-channel devices. p-Channel heterostructure field-effect transistors (HFETs) could open the way for nitride-based complementary logic. Here, a comprehensive study of enhancement and depletion mode p-channel GaN/AlInGaN HFETs is performed. The influence of a highly p-doped GaN cap layer on device performance is investigated. Gate recessing and changes in composition of the backbarrier are analyzed. ON/OFF ratios of up to 108 and subthreshold swings of about 75 mV/decade are achieved.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; wide band gap semiconductors; GaN-AlInGaN; III-nitride-based devices; backbarrier composition analysis; depletion mode GaN-based HFETs; gate recessing; p-channel enhancement; p-channel heterostructure field-effect transistors; p-doped GaN cap layer; quaternary backbarriers; Gallium nitride; HEMTs; Leakage currents; Logic gates; MODFETs; Two dimensional hole gas; AlInGaN; depletion mode; enhancement mode; gallium nitride; p-channel; quaternary;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2272330
