p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

Author

Hahn, Herwig ; Reuters, B. ; Pooth, A. ; Hollander, B. ; Heuken, M. ; Kalisch, Holger ; Vescan, Andrei

Author_Institution

GaN Device Technol., RWTH Aachen Univ., Aachen, Germany

Volume

60

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

3005

Lastpage

3011

Abstract

Within the last years, III-nitride-based devices have been demonstrated with exceptional performance. There is, however, a severe lack of knowledge when it comes fabrication of p-channel devices. p-Channel heterostructure field-effect transistors (HFETs) could open the way for nitride-based complementary logic. Here, a comprehensive study of enhancement and depletion mode p-channel GaN/AlInGaN HFETs is performed. The influence of a highly p-doped GaN cap layer on device performance is investigated. Gate recessing and changes in composition of the backbarrier are analyzed. ON/OFF ratios of up to 10⁸ and subthreshold swings of about 75 mV/decade are achieved.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; wide band gap semiconductors; GaN-AlInGaN; III-nitride-based devices; backbarrier composition analysis; depletion mode GaN-based HFETs; gate recessing; p-channel enhancement; p-channel heterostructure field-effect transistors; p-doped GaN cap layer; quaternary backbarriers; Gallium nitride; HEMTs; Leakage currents; Logic gates; MODFETs; Two dimensional hole gas; AlInGaN; depletion mode; enhancement mode; gallium nitride; p-channel; quaternary;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2272330

Filename

6560393