A Rigorous Model for Through-Silicon Vias With Ohmic Contact in Silicon Interposer

Author

De-Cao Yang ; Jianyong Xie ; Swaminathan, Madhavan ; Xing-Chang Wei ; Er-Ping Li

Author_Institution

Dept. of ISEE, Zhejiang Univ., Hangzhou, China

Volume

23

Issue

8

fYear

2013

fDate

Aug. 2013

Firstpage

385

Lastpage

387

Abstract

High-density through-silicon via (TSV) interconnects in silicon interposer require effective crosstalk-reduction signaling schemes and rigorous crosstalk modeling techniques. In this letter, we propose a rigorous model for grounded TSVs with ohmic contact. The proposed model takes into account contact resistance, doping density, and doping-region capacitance for the metal-silicon interface of grounded TSVs. The comparison between modeling results and full-wave simulations validates the accuracy of the proposed model for signal-ground-signal vias.

Keywords

capacitance; circuit simulation; contact resistance; crosstalk; elemental semiconductors; integrated circuit interconnections; ohmic contacts; semiconductor doping; silicon; three-dimensional integrated circuits; Si; TSV interconnects; contact resistance; crosstalk modeling; crosstalk-reduction signaling; doping density; doping-region capacitance; full-wave simulations; grounded TSV; high-density through-silicon via interconnects; metal-silicon interface; ohmic contact; signal-ground-signal vias; silicon interposer; Capacitance; Crosstalk; Doping; Ohmic contacts; Semiconductor process modeling; Silicon; Through-silicon vias; Crosstalk; metal-oxide-semiconductor (MOS) capacitance; ohmic contact; signal integrity; through-silicon via (TSV);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2013.2270459

Filename

6560413