DocumentCode
458581
Title
Recent Progress in Development of GaInNAs- Based Photonic Devices
Author
Konttinen, Janne ; Tuomisto, Pietari ; Guina, Mircea ; Pessa, Markus
Author_Institution
Optoelectron. Res. Center, Tampere Univ. of Technol.
Volume
2
fYear
2006
fDate
18-22 June 2006
Firstpage
189
Lastpage
192
Abstract
The GaInNAs/GaAs semiconductor heterostructures have emerged as promising alternatives to InP-based compound semiconductors for the fabrication of 1.3-mum METRO and LAN telecommunications lasers. We shall review the recent advances made in the field of the GaInNAs technology. An emphasis is put on the development of low-threshold double-quantum-well (DQW) and triple-quantum-well (TQW) ridge waveguide lasers (RWG) grown by molecular beam epitaxy. A record slope efficiency of 0.28 W/A and a low threshold current density of 278 A/cm2/QW are demonstrated in this paper for the TQW single-mode lasers. We shall also discuss the first measurements of electron-spin relaxation in dilute nitride quantum-wells. Excitation of spin-polarized electrons is potentially attractive for implementing all-optical polarization switches in a broad wavelength range
Keywords
III-V semiconductors; electron spin polarisation; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical communication equipment; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 1.3 mum; GaInNAs-GaAs; GaInNAs/GaAs semiconductor heterostructures; LAN; METRO; all-optical polarization switch; current density; double-quantum-well ridge waveguide lasers; electron-spin relaxation; molecular beam epitaxy; slope efficiency; spin-polarized electrons; triple-quantum-well ridge waveguide lasers; Gallium arsenide; Local area networks; Molecular beam epitaxial growth; Optical device fabrication; Quantum well lasers; Semiconductor lasers; Semiconductor waveguides; Threshold current; Waveguide lasers; Wavelength measurement; GaInNAs; molecular beam epitaxy; optical communication; polarization switch; semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Transparent Optical Networks, 2006 International Conference on
Conference_Location
Nottingham
Print_ISBN
1-4244-0235-2
Electronic_ISBN
1-4244-0236-0
Type
conf
DOI
10.1109/ICTON.2006.248371
Filename
4013767
Link To Document