DocumentCode :
458583
Title :
Femtosecond Switching of Electron and Phonon Streams in Gallium Nitride Crystals
Author :
Brazis, R. ; Raguotis, R.
Author_Institution :
Semicond. Phys. Inst., Vilnius
Volume :
2
fYear :
2006
fDate :
18-22 June 2006
Firstpage :
203
Lastpage :
206
Abstract :
Ensemble Monte Carlo method is employed for the study of electron and phonon system in cubic GaN crystals subjected to femtosecond electric field pulses. Transient response is considered at the lattice temperatures of 15 and 300 K. THz electromagnetic wave emission by the transient electron drift response is found to be more effective at 300 K than at low temperatures. Contrary to it, low temperatures are favourable for creating the LO phonon band population inversion with respect to the acoustic one. Phonon band population inversion can give rise to the stimulated emission of THz photons
Keywords :
Monte Carlo methods; electron-phonon interactions; gallium compounds; high-speed optical techniques; optical materials; population inversion; wide band gap semiconductors; 15 K; 300 K; GaN; LO phonon band; Monte Carlo method; THz electromagnetic wave emission; THz photons; electron streams; femtosecond switching; gallium nitride crystals; phonon streams; population inversion; stimulated emission; Crystals; Electromagnetic scattering; Electromagnetic transients; Electrons; Gallium nitride; III-V semiconductor materials; Lattices; Phonons; Temperature; Transient response; GaN; Monte Carlo; THz emission; ballistic electrons; phonons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Transparent Optical Networks, 2006 International Conference on
Conference_Location :
Nottingham
Print_ISBN :
1-4244-0235-2
Electronic_ISBN :
1-4244-0236-0
Type :
conf
DOI :
10.1109/ICTON.2006.248374
Filename :
4013770
Link To Document :
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