DocumentCode :
459152
Title :
X-Band Power AlGaN/GaN HEMT
Author :
Abolduyev, I.M. ; Gladysheva, N.B. ; Dorofeev, A.A. ; Minnebaev, V.M. ; Tchernyavsky, A.A.
Author_Institution :
SRI, Moscow
Volume :
1
fYear :
2006
fDate :
Sept. 2006
Firstpage :
179
Lastpage :
179
Abstract :
In this paper, the results of design and manufacture of middle power X-band AlGaN/GaN HEMT are presented. It has Gain=11 dB, POUT =1.4 W/mm at F=10 GHz
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave power transistors; power HEMT; semiconductor device manufacture; 10 GHz; AlGaN-GaN; X-band power HEMT; high electron mobility transistor; Aluminum gallium nitride; Artificial intelligence; Gallium nitride; Gold; HEMTs; Helium; MOCVD; Microwave technology; Organizing; Pulp manufacturing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
Type :
conf
DOI :
10.1109/CRMICO.2006.256350
Filename :
4023655
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=459152
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