• DocumentCode
    459152
  • Title

    X-Band Power AlGaN/GaN HEMT

  • Author

    Abolduyev, I.M. ; Gladysheva, N.B. ; Dorofeev, A.A. ; Minnebaev, V.M. ; Tchernyavsky, A.A.

  • Author_Institution
    SRI, Moscow
  • Volume
    1
  • fYear
    2006
  • fDate
    Sept. 2006
  • Firstpage
    179
  • Lastpage
    179
  • Abstract
    In this paper, the results of design and manufacture of middle power X-band AlGaN/GaN HEMT are presented. It has Gain=11 dB, POUT =1.4 W/mm at F=10 GHz
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; microwave power transistors; power HEMT; semiconductor device manufacture; 10 GHz; AlGaN-GaN; X-band power HEMT; high electron mobility transistor; Aluminum gallium nitride; Artificial intelligence; Gallium nitride; Gold; HEMTs; Helium; MOCVD; Microwave technology; Organizing; Pulp manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    966-7968-92-8
  • Electronic_ISBN
    966-7968-92-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2006.256350
  • Filename
    4023655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=459152