DocumentCode
45951
Title
Waveform Evidence of Gate Harmonic Short Circuit Benefits for High Efficiency X-Band Power Amplifiers
Author
Canning, Tim ; Tasker, P. ; Cripps, Steve C.
Author_Institution
Cardiff Sch. of Eng., Cardiff Univ., Cardiff, UK
Volume
23
Issue
8
fYear
2013
fDate
Aug. 2013
Firstpage
439
Lastpage
441
Abstract
An active load pull waveform measurement system has been utilized to investigate, by drain current waveform analysis, the effect of short circuits at the second and higher harmonics on the gate of a 750 μm Gallium Arsenide transistor. It is confirmed that the half wave rectified sinusoidal current waveform necessary for modes of operation such as class B, J and F is not optimally generated at X-Band frequencies for transistors controlled purely by bias. The disrupting effect of the nonlinear device gate capacitance must be accounted for to take full advantage of these high efficiency modes. The addition of a simple wide band filter circuit at the input of a MMIC test cell to “short” the gate higher harmonics is shown to force the drain current waveform towards the ideal case and hence yield a significant increase in drain efficiency of up to 10 percent.
Keywords
III-V semiconductors; MMIC power amplifiers; gallium arsenide; GaAs; MMIC test cell; X-band power amplifiers; drain current waveform analysis; gate harmonic short circuit; load pull waveform measurement system; nonlinear device gate capacitance; size 750 mum; transistor; wide band filter circuit; Current measurement; Harmonic analysis; Logic gates; Microwave circuits; Power system harmonics; Transistors; Varactors; Class B/J; GaAs HEMT; input harmonic; power amplifiers (PAs); varactor;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2013.2272317
Filename
6560437
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