Growth of High-Quality CuGaSe2 Thin Films using Ionized Ga Precursors

Author

Yamada, Akira ; Miyazaki, Hisashi ; Miyake, Takahiro ; Chiba, Yoshiyuki ; Konagai, Makoto

Author_Institution

Quantum Nanaoelectron. Res. Center, Tokyo Inst. of technol.

Volume

1

fYear

2006

fDate

38838

Firstpage

343

Lastpage

347

Abstract

We have newly proposed a novel growth method for high quality CuGaSe₂ (CGS) thin films in which ionized Ga was used as new source material. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy. The grain size enlargement was successfully demonstrated by using ionized Ga precursors. The experiments revealed that the local heating caused by energy released from high energy Ga ions was one of possible reasons of this grain size enlargement and that the migration energy enhancement of Ga precursors played an important role in the crystal growth of high quality CGS films

Keywords

Raman spectra; X-ray diffraction; copper compounds; grain size; scanning electron microscopy; semiconductor thin films; ternary semiconductors; vacuum deposition; CGS thin films; CuGaSe₂; Raman spectroscopy; SEM; X-ray diffraction; XRD; crystal growth; grain size; migration energy; scanning electron microscopy; Grain size; Photonic band gap; Photovoltaic cells; Raman scattering; Scanning electron microscopy; Substrates; Temperature; Transistors; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279460

Filename

4059633