• DocumentCode
    460094
  • Title

    Chalcopyrite Thin-Film Tandem Solar Cells with 1.5 V Open-Circuit-Voltage

  • Author

    Nakada, Tokio ; Kijima, Shunsuke ; Kuromiya, Yasuhito ; Arai, Ryota ; Ishii, Yasuyuki ; Kawamura, Nobuyuki ; Ishizaki, Hiroki ; Yamada, Naoomi

  • Author_Institution
    Dept. of Electr. Eng., Aoyama Gakuin Univ., Kanagawa
  • Volume
    1
  • fYear
    2006
  • fDate
    7-12 May 2006
  • Firstpage
    400
  • Lastpage
    403
  • Abstract
    We have fabricated two-terminal mechanical stacked chalcopyrite-based tandem devices to identify the technical issues required to achieve high performance solar cells in the near future. A tandem device with a Ag(ln0.2Ga0.8)Se2 (AIGS) top cell and a Cu(ln,Ga)Se2 (CIGS) bottom cell showed an open-circuit-voltage (Voc) of 1.46 V. It was, however, found that the short-circuit current (Jsc) of a two-terminal tandem device was limited by the low Jsc of the filtered bottom cell because of a current mismatch between the top and bottom cells. In order to improve the Jsc of the filtered bottom cell, we have tried two process options, replacing ITO back contacts with high-mobility (Mo-doped ln2O3) IMO and the use of low-Ga content CIGS bottom cells. The Jsc of the filtered bottom cells increased significantly using these techniques. As a result, an 8 % total-area (0.5 cm2) efficiency 2-terminal mechanical stacked tandem device was achieved using a CIGS (15% Ga) bottom cell with an AIGS top cell fabricated with an IMO back contact
  • Keywords
    copper compounds; gallium compounds; indium compounds; semiconductor thin films; silver compounds; solar cells; ternary semiconductors; 1.46 V; AgIn0.2Ga0.8Se2; CuInGaSe2; ITO; chalcopyrite thin-film tandem solar cells; efficiency; filtered bottom cell; high-mobility Mo-doped ln2O3 back contact; open-circuit-voltage; short-circuit current; top cell; two-terminal mechanical stacked chalcopyrite-based tandem devices; Computer simulation; Fabrication; Indium tin oxide; Molecular beam epitaxial growth; Photonic band gap; Photovoltaic cells; Sputtering; Thin film devices; Transistors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
  • Conference_Location
    Waikoloa, HI
  • Print_ISBN
    1-4244-0016-3
  • Electronic_ISBN
    1-4244-0017-1
  • Type

    conf

  • DOI
    10.1109/WCPEC.2006.279474
  • Filename
    4059647