Title :
Phenomenological model of CdS based thin film photovoltaics
Author :
Cooray, M.L.C. ; Karpov, V.G.
Author_Institution :
Dept. of Phys. & Astron., Toledo Univ., OH
Abstract :
We propose a list of indicative facts and a model of CdS-based thin-film photovoltaic junctions including their major types with CdTe and CIGS absorber layers. Our MIS phenomenological model allows for field reversal in the depleted CdS layer. It is solved analytically and predicts a variety of phenomena, such as the lack of carrier collection from CdS, buffer layer effects, light to dark current-voltage curve crossing and rollover
Keywords :
II-VI semiconductors; buffer layers; cadmium compounds; photoelectric devices; photovoltaic effects; semiconductor device models; semiconductor thin films; thin film devices; wide band gap semiconductors; CdS-CdTe; CdS-CuInGaSe2; absorber layers; buffer layer effects; dark current-voltage curve; semiconductor device model; thin film photovoltaic junctions; Buffer layers; Crystallization; Doping; P-n junctions; Photovoltaic cells; Physics; Semiconductor process modeling; Semiconductor thin films; Thin film devices; Transistors;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279512
