The Effect of a Post Oxidation In-Situ Nitrogen Anneal on si Surface Passivation

Author

Jin, Hao ; Weber, K.J. ; Blakers, A.W.

Author_Institution

Fac. of Eng. & Inf. Technol., Australian Nat. Univ., Canberra, ACT

Volume

1

fYear

2006

fDate

38838

Firstpage

1071

Lastpage

1073

Abstract

The thermal stability of Si/SiO₂ stacks and Si/SiO₂/Si₃N₄ stacks with and without post oxidation in-situ anneal in nitrogen is investigated by Quasi-steady state photoconductivity decay (QSSPCD) and electronic paramagnetic resonance (EPR). With in-situ annealing in nitrogen, the Si-SiO₂ interface shows a reduced density of paramagnetic defects and better thermal stability. Si/SiO₂/Si₃N ₄ stacks have a much slower depassivation rate than Si/SiO ₂ stacks due to hydrogen stored in nitride layer

Keywords

annealing; elemental semiconductors; oxidation; paramagnetic resonance; passivation; photoconductivity; silicon; silicon compounds; thermal stability; EPR; QSSPCD; Si; Si-SiO₂; Si-SiO₂-Si₃N₄; depassivation rate; electronic paramagnetic resonance; nitride layer; nitrogen annealing; paramagnetic defects; post oxidation effect; quasisteady state photoconductivity decay; silicon surface passivation; thermal stability; Annealing; Nitrogen; Oxidation; Paramagnetic materials; Paramagnetic resonance; Passivation; Photoconductivity; Surface treatment; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279326

Filename

4059817