Title :
Realization of Thin MC-Silicon Pert-Type Bifacial Solar Cells in Industrial Environments
Author :
Arumughan, J. ; Kopecek, R. ; Pernau, T. ; Buck, T. ; Fath, P. ; Peter, K.
Author_Institution :
Dept. of Phys., Konstanz Univ.
Abstract :
We present bifacial solar cells processed with a sequence suitable for industrial production. This method uses the LPCVD silicon nitride deposition based on DCS (dichlorosilane) or BTBAS (bis-(tertiary butyl amino)-silane). The bifacial solar cell process on wafers of 200 mum thickness has the following steps: (1) boron doped BSF of Rsheet =60 ohm/sq; (2) POCl3 emitter (on front side) of Rsheet= 50-55 ohm/sq; (3) thermal oxidation of the wafer surfaces; (4) the deposition of DCS or BTBAS based LPCVD silicon nitride on either sides of the wafer (5); finger grid printing on both sides and firing; (6) edge isolation. The solar cells produced with the DCS based silicon nitride process exhibit fill factor (FF) values of 76% on p-type and 75% on n-type solar cells with a rear to front efficiency ratio etarear/etafront of 67% for the p-type solar cells and 43% for the n-type solar cells. The solar cells with the BTBAS silicon nitride show FF values close to 72% and etarear/etafront 68% for p-type solar cells
Keywords :
chemical vapour deposition; elemental semiconductors; firing (materials); oxidation; silicon; solar cells; LPCVD silicon nitride; Si; bis-(tertiary butyl amino)-silane; dichlorosilane; finger grid printing; firing; industrial production; n-type solar cells; p-type solar cells; thermal oxidation; thin silicon PERT bifacial solar cells; wafer surfaces; Boron; Distributed control; Fingers; Firing; Oxidation; Photovoltaic cells; Printing; Production; Silicon; Time of arrival estimation;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279353