Technology of Wide-Bandgap Diode Structures for Highfrequency Operation

Author

Mutamba, K. ; Yilmazoglu, O. ; Cojocari, O. ; Sydlo, C. ; Pavlidis, D. ; Hartnagel, H.L.

Author_Institution

Inst. fuer Hoehfrequenztechnik, Technische Univ. Darmstadt

Volume

1

fYear

2006

fDate

27-29 Sept. 2006

Firstpage

85

Lastpage

92

Abstract

This paper reports on technology development aspects for GaN-based diodes in view of their application at high frequencies. The investigated devices include structures for transferred electron effects for operation at high electric-fields as well as heterostructure varactors (HBV) and Schottky diodes for frequency multiplication function. The impact of factors such as high threshold voltage for transferred electron effects, strong piezoelectric effects and Schottky barrier properties on device technologies and performances are addressed

Keywords

Schottky barriers; Schottky diodes; gallium compounds; piezoelectricity; varactors; wide band gap semiconductors; GaN; HBV; Schottky barrier properties; Schottky diodes; frequency multiplication function; heterostructure varactors; high frequency operation; piezoelectric effects; transferred electron effects; wide-bandgap diode structures; Doping; Electrons; Frequency; Gallium nitride; Metallization; Ohmic contacts; Paper technology; Schottky barriers; Schottky diodes; Voltage; GaN; HBV; Schottky; diode;

fLanguage

English

Publisher

ieee

Conference_Titel

International Semiconductor Conference, 2006

Conference_Location

Sinaia

Print_ISBN

1-4244-0109-7

Type

conf

DOI

10.1109/SMICND.2006.283938

Filename

4063165