Title :
High-quality Solenoid Inductors on Silicon Wafers
Author :
Tai, Chih-Ming ; Liao, Chien-Neng
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu
Abstract :
A solenoid inductor with a peak quality factor (Qmax) of 33.4 at 4.6 GHz has been realized on standard silicon wafers with a low-k dielectric layer using surface micromachining techniques. Experimental results show that the 6-turn inductor with an aspect ratio (AR) of 0.5 gives a 98% increase in Qmax, 40% increase in L/A ratio and 245% increase in SRF as compared to the 6-turn inductor with an aspect ratio of 0.1. The improvement of Qmax is mainly due to the reduced series resistance and parasitic capacitance between the inductor and the silicon substrate
Keywords :
Q-factor; dielectric materials; inductors; micromachining; silicon; solenoids; 4.6 GHz; low-k dielectric layer; peak quality factor; silicon wafers; solenoid inductors; surface micromachining technique; Coils; Copper; Inductors; Q factor; Radio frequency; Resists; Silicon; Solenoids; Spirals; Substrates;
Conference_Titel :
Communications, Circuits and Systems Proceedings, 2006 International Conference on
Conference_Location :
Guilin
Print_ISBN :
0-7803-9584-0
Electronic_ISBN :
0-7803-9585-9
DOI :
10.1109/ICCCAS.2006.284789
