DocumentCode
460484
Title
High-quality Solenoid Inductors on Silicon Wafers
Author
Tai, Chih-Ming ; Liao, Chien-Neng
Author_Institution
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu
Volume
2
fYear
2006
fDate
25-28 June 2006
Firstpage
866
Lastpage
869
Abstract
A solenoid inductor with a peak quality factor (Qmax) of 33.4 at 4.6 GHz has been realized on standard silicon wafers with a low-k dielectric layer using surface micromachining techniques. Experimental results show that the 6-turn inductor with an aspect ratio (AR) of 0.5 gives a 98% increase in Qmax, 40% increase in L/A ratio and 245% increase in SRF as compared to the 6-turn inductor with an aspect ratio of 0.1. The improvement of Qmax is mainly due to the reduced series resistance and parasitic capacitance between the inductor and the silicon substrate
Keywords
Q-factor; dielectric materials; inductors; micromachining; silicon; solenoids; 4.6 GHz; low-k dielectric layer; peak quality factor; silicon wafers; solenoid inductors; surface micromachining technique; Coils; Copper; Inductors; Q factor; Radio frequency; Resists; Silicon; Solenoids; Spirals; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications, Circuits and Systems Proceedings, 2006 International Conference on
Conference_Location
Guilin
Print_ISBN
0-7803-9584-0
Electronic_ISBN
0-7803-9585-9
Type
conf
DOI
10.1109/ICCCAS.2006.284789
Filename
4064030
Link To Document