Title :
Silicon Avalanche Diode with an Epitaxial Double Drift Structure for Millimetric Applications
Author_Institution :
THOMSON C.S.F./DMH - Domaine de Corbeville - 91401 ORSAY (FRANCE)
Keywords :
Charge carrier processes; Diodes; Gold; Impurities; Power generation; Silicon; Temperature control; Thermal resistance; Thickness control; Voltage;
Conference_Titel :
Microwave Conference, 1973. 3rd European
Conference_Location :
Brussels, Belgium
DOI :
10.1109/EUMA.1973.331591
