DocumentCode

461840

Title

Silicon Impatt Diodes for Operation at Greater than 50 GHz

Author

Hilsden, F.J. ; Butler, C.M.

Author_Institution

The General Electric Company Limited, Hirst Research Centre, Wembley, England.

Volume

1

fYear

1973

fDate

4-7 Sept. 1973

Firstpage

1

Lastpage

4

Keywords

Bonding; Capacitance-voltage characteristics; Conductivity; Diodes; Doping profiles; Epitaxial layers; Frequency; Silicon; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1973. 3rd European

Conference_Location

Brussels, Belgium

Type

conf

DOI

10.1109/EUMA.1973.331592

Filename

4130175