DocumentCode
462706
Title
Development of Semiconductor Gamma-Camera System with CdZnTe Detectors
Author
Ogawa, Koichi ; Ohta, Atsushi ; Shuto, Keisei ; Motomura, Nobutoku ; Kobayashi, Hiroaki ; Makino, Shunichiro ; Nakahara, Tadaki ; Kubo, Atsushi
Author_Institution
Dept. of Electron. Informatics, Hosei Univ., Tokyo
Volume
4
fYear
2006
fDate
Oct. 29 2006-Nov. 1 2006
Firstpage
2426
Lastpage
2429
Abstract
A CdZnTe semiconductor detector, which works at room temperature, may realize a next generation gamma-camera system due to its high spatial resolution and high energy resolution. We made a prototype gamma-camera system with CdZnTe detectors to evaluate the feasibility of the semiconductor gamma-camera. This paper described our prototype system and some results obtained with this system.
Keywords
II-VI semiconductors; cadmium compounds; gamma-ray detection; semiconductor counters; zinc compounds; CdZnTe detectors; high energy resolution; high spatial resolution; room temperature; semiconductor detector; semiconductor gamma-camera system; Cameras; Collimators; Energy resolution; Gamma ray detection; Gamma ray detectors; Prototypes; Single photon emission computed tomography; Size measurement; Solid scintillation detectors; Spatial resolution;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location
San Diego, CA
ISSN
1095-7863
Print_ISBN
1-4244-0560-2
Electronic_ISBN
1095-7863
Type
conf
DOI
10.1109/NSSMIC.2006.354402
Filename
4179516
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