Physical Analysis and Design of Resonant Plasma-Wave Transistors for Terahertz Emitters

Author

Jong Yul Park ; Sung-Ho Kim ; Sung-Min Hong ; Kyung Rok Kim

Author_Institution

Sch. of Electr. & Comput. Eng., Ulsan Nat. Inst. of Sci. & Technol., Ulsan, South Korea

Volume

5

Issue

2

fYear

2015

fDate

Mar-15

Firstpage

244

Lastpage

250

Abstract

In this work, we performed physical analysis of resonant plasma-wave transistors (PWTs) for terahertz (THz) emitters. Through the analytical decomposition of plasma-waves into upstream and downstream focusing on the different phase velocity, we show that the reflection coefficient is over unity and newly introduce the PWT design window based on a simple 2-D plot, which can provide both the maximum channel length (L_max) and operation frequency. By our design window analysis, strained silicon channel with a momentum relaxation time of 50-160 fs (i.e., channel mobility 500-1500 cm²/Vs) show technology-compatible Lmax as 12-40 nm with a tunable resonance frequency of 2- 10 THz .

Keywords

elemental semiconductors; field effect transistors; plasma focus; plasma waves; reflectivity; silicon; terahertz wave devices; 2D plot; Si; analytical decomposition; design window analysis; downstream focusing; frequency 2 THz to 10 THz; maximum channel length; momentum relaxation time; operation frequency; phase velocity; physical analysis; reflection coefficient; resonant plasma-wave transistors; size 12 nm to 40 nm; strained silicon channel; terahertz emitters; time 50 fs to 160 fs; tunable resonance frequency; upstream focusing; HEMTs; Logic gates; MODFETs; Oscillators; Resonant frequency; Silicon; Plasma-wave transistor (PWT); design window; emitter; maximum channel length; mobility; momentum relaxation time; resonance frequency; strained silicon; terahertz (THz);

fLanguage

English

Journal_Title

Terahertz Science and Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-342X

Type

jour

DOI

10.1109/TTHZ.2015.2392630

Filename

7029115