Title :
MRAM PUF: A Novel Geometry Based Magnetic PUF With Integrated CMOS
Author :
Das, Jayita ; Scott, Kevin ; Rajaram, Srinath ; Burgett, Drew ; Bhanja, Sanjukta
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Abstract :
This manuscript addresses a novel MRAM-based physically unclonable function (PUF). The PUF responses are generated using the unique energy-tilt, which is an outcome of the random geometric variations in the MRAM cells. We have verified relevant attributes of this PUF through extensive magnetic simulations and in-house fabrication results. Our fabricated PUF cells generate entropy as high as 0.99, which is comparable to most of its competitors. To our knowledge, the footprint of the PUF cells is also lower than the majority of silicon PUFs. Also, the authentication control algorithm for this PUF requires very low additional control-steps. We conclude our discussion of this novel PUF with a study of authentication overhead and protocols required by the PUF system in terms of area, power, and delay.
Keywords :
CMOS memory circuits; MRAM devices; cryptographic protocols; entropy; MRAM PUF; MRAM-based physically unclonable function; authentication control algorithm; authentication overhead; authentication protocols; entropy; geometry based magnetic PUF; integrated CMOS; magnetic simulations; Arrays; Couplings; Fabrication; Geometry; Magnetic tunneling; Scanning electron microscopy; Stationary state; Easy axis; MRAM; PUF; easy axis; energy; geometric variations; process variations; randomness;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2015.2397951