Switching Transients of Power Diode

Author

Eio, S. ; Shammas, N.Y.A.

Author_Institution

Staffordshire Univ., Stafford

Volume

2

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

564

Lastpage

568

Abstract

The aim of the work presented in this paper is to gain an insight in the switching transient of the power diode, reverse recovery, and methods of reducing the reverse recovery time. The limitations have also been discussed in using carrier lifetime killing such as by doping gold and platinum during the manufacturing process, high-energy irradiation before metallisation and after encapsulation, and a recent research to associate monolithically devices to obtain low conduction losses and high switching ability

Keywords

carrier lifetime; power semiconductor diodes; radiation effects; semiconductor doping; switching transients; carrier lifetime killing; encapsulation; gold doping; high-energy irradiation; low conduction losses; manufacturing process; metallisation; monolithic devices; platinum doping; power diode; reverse recovery; switching transients; Charge carrier lifetime; Circuits; Impedance; Inductance; Power semiconductor switches; Semiconductor diodes; Space charge; Steady-state; Switching frequency; Voltage; Switching transients; carrier lifetime killing; reverse recovery time;

fLanguage

English

Publisher

ieee

Conference_Titel

Universities Power Engineering Conference, 2006. UPEC '06. Proceedings of the 41st International

Conference_Location

Newcastle-upon-Tyne

Print_ISBN

978-186135-342-9

Type

conf

DOI

10.1109/UPEC.2006.367541

Filename

4218748