Enhanced Field Emission Properties of Ga-Doped ZnO Nanosheets by using an Aqueous Solution at Room Temperature

Author

Yi-Hsing Liu ; Sheng-Joue Young ; Liang-Wen Ji ; Shoou-Jinn Chang

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

61

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

4192

Lastpage

4196

Abstract

In this paper, gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by using aqueous solution method. It was found that the GaZnO nanosheets grown at room temperature were structurally uniform and well oriented with pure wurtzite structure. The turn-on fields of ZnO and GaZnO nanosheets were 5.9 and 4.67 V/μm, and field enhancement factors (β) were 1966 and 4037, respectively. The results indicate that Ga-doped ZnO nanosheets exhibit enhanced field emission (FE) properties and are a promising candidate in future FE-based device applications.

Keywords

field emission; gallium; glass; nanostructured materials; semiconductor doping; semiconductor growth; zinc compounds; ZnOGa; aqueous solution; enhanced field emission properties; field enhancement factors; glass substrate; nanosheets; pure wurtzite structure; Gallium compounds; Glass substrates; Nanoscale devices; Nanostructures; Substrates; Temperature measurement; Zinc oxide; Aqueous solution method; Ga-doped ZnO; field emitters; nanosheet; nanosheet.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2362134

Filename

6930807