Highly Sensitive Midinfrared Phototransistor

Author

An, Zhenghua ; Ueda, T. ; Komiyama, S. ; Hirakawa, K.

Author_Institution

Tokyo Univ., Tokyo

fYear

2006

fDate

18-22 Sept. 2006

Firstpage

29

Lastpage

29

Abstract

We propose and demonstrate a highly sensitive phototransistor (14.5 mum). An electrically isolated quantum well (QW) island serves as a photo-sensitive gate (200 times 50 mum) to a nearby two-dimensional conducting channel. Photoelectrons are excited via intersubband transition and escape from the QW, causing the QW to charge up positively. This is, in turn, sensed by the conductance increase in the nearby channel. Reducing the lateral size of the photo-sensitive QW gate (~1 times 1 mum), we achieve photon-counting level sensitivity.

Keywords

photon counting; phototransistors; quantum wells; electrically isolated quantum well; lateral size; photon-counting level sensitivity; photosensitive QW gate; photosensitive gate; sensitive midinfrared phototransistor; two-dimensional conducting channel; wavelength 14.5 mum; Background noise; Electromagnetic wave absorption; Electrons; Infrared detectors; Lighting; Phototransistors; Quantum dots; Semiconductor device noise; Superconducting photodetectors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0400-2

Electronic_ISBN

1-4244-0400-2

Type

conf

DOI

10.1109/ICIMW.2006.368238

Filename

4221972