A Fully Integrated Concurrent Dual-Band Low Noise Amplifier with Suspended Inductors in SiGe 0.35 μm BiCMOS Technology

Author

Lin, Yu-Tso ; Wang, Tao ; Lu, Shey-Shi

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei

fYear

2007

fDate

27-30 May 2007

Firstpage

425

Lastpage

428

Abstract

A fully integrated concurrent dual-band low noise amplifier with suspended inductors is first reported. A new approach is proposed for input impedance matching at multiple frequencies concurrently. The experimental results showed that input return losses of -12.8 and -11.5 dB, voltage gains of 14.4 and 14.3 dB and noise figures of 2.5 and 3.0 dB were obtained at 2.3 GHz and 4.5 GHz, respectively, with an image rejection ratio of 26.1dB and power consumption of 11.9 mW. It is found that voltage gains, noise figures and image rejection ratio are improved due to the use of suspended inductors with same power consumption.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; impedance matching; inductors; low noise amplifiers; microwave amplifiers; -11.5 dB; -12.8 dB; 0.35 micron; 11.9 mW; 14.3 dB; 14.4 dB; 2.3 GHz; 2.5 dB; 3.0 dB; 4.5 GHz; BiCMOS technology; SiGe; dual-band low noise amplifier; fully integrated concurrent low noise amplifier; impedance matching; suspended inductors; BiCMOS integrated circuits; Dual band; Energy consumption; Germanium silicon alloys; Impedance matching; Inductors; Low-noise amplifiers; Noise figure; Silicon germanium; Voltage; LNA; dual-band; inductors; suspended;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on

Conference_Location

New Orleans, LA

Print_ISBN

1-4244-0920-9

Electronic_ISBN

1-4244-0921-7

Type

conf

DOI

10.1109/ISCAS.2007.378554

Filename

4252662