DocumentCode
464959
Title
Fault Tolerance Circuit for AM-OLED
Author
Li, Dayong ; Liu, Ming ; Wang, Wei
Author_Institution
Inst. of Microelectron., Chinese Acad. of Sci., Beijing
fYear
2007
fDate
27-30 May 2007
Firstpage
2272
Lastpage
2274
Abstract
A novel circuit employing p-type low-temperature poly-Si thin-film transistors is introduced for active matrix-organic light-emitting diode (AM-OLED) circuits to automatically detect short defects and switch to a spare OLED. This design maintains the luminance of the OLED pixel without changing the driving current in the event of defects. Experimental results show that not only is fault tolerance capability obtained during operation, but also a significant amount (around 90%) of power consumption is saved compared with the standard driving circuits.
Keywords
active networks; fault tolerance; organic light emitting diodes; thin film transistors; AM-OLED; active matrix-organic light-emitting diode circuits; fault tolerance circuit; p-type low-temperature poly-Si thin-film transistors; Energy consumption; Fault tolerance; Flat panel displays; Inverters; Microelectronics; Organic light emitting diodes; Switches; Switching circuits; Thin film transistors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location
New Orleans, LA
Print_ISBN
1-4244-0920-9
Electronic_ISBN
1-4244-0921-7
Type
conf
DOI
10.1109/ISCAS.2007.378840
Filename
4253127
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