Title :
Nonvolatile Flash Memories in Silicon-on-sapphire CMOS
Author :
Yeh, Chun-Chen ; Culurciello, Eugenio
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT
Abstract :
We designed, fabricated and tested four kinds of nonvolatile memories in a commercially-available 0.5mum silicon-on-sapphire CMOS process. The device tested are PMOS and NMOS with MOS- and MIM-based floating gates. We report on the test results of all four devices and demonstrate that MIM-based NMOS floating gate cells can be use to achieve a threshold shift of 0.4V and no significant decay of threshold voltage after small retentions tests of more than 100 s.
Keywords :
CMOS memory circuits; MIM devices; flash memories; 0.4 V; 0.5 micron; 100 s; MIM-based floating gate; MOS-based floating gate; NMOS-based floating gate; PMOS-based floating gate; nonvolatile flash memory; silicon-on-sapphire CMOS; CMOS process; Character generation; Electrons; Flash memory; Flash memory cells; MOS devices; MOSFETs; Nonvolatile memory; Testing; Threshold voltage;
Conference_Titel :
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location :
New Orleans, LA
Print_ISBN :
1-4244-0920-9
Electronic_ISBN :
1-4244-0921-7
DOI :
10.1109/ISCAS.2007.378630
