• DocumentCode
    465036
  • Title

    A Self-Biased and FPN-Compensated Digital APS for Hybrid CMOS Imagers

  • Author

    Serra-Graells, F. ; Margarit, J.M. ; Terés, L.

  • Author_Institution
    Centro Nacional de Microelectron., Inst. de Microelectron. de Barcelona
  • fYear
    2007
  • fDate
    27-30 May 2007
  • Firstpage
    2850
  • Lastpage
    2853
  • Abstract
    This paper presents a new low-power and compact digital active pixel sensor (APS) for hybrid CMOS imagers. The proposed self-biased topology includes built-in dark current and input capacitance compensation, mixed integration, A/D conversion and a purely digital I/O interface, all at pixel level. Furthermore, full FPN compensation and AGC capabilities are also supplied by digitally pre-programming the individual sensitivity of each APS during the read-out phase without any speed reduction. In this sense, experimental results are reported for a 100mumtimes100mum complete APS circuit in standard 0.35mum CMOS 2-polySi 4-metal technology for IR applications.
  • Keywords
    CMOS digital integrated circuits; CMOS image sensors; low-power electronics; 0.35 micron; 100 micron; 2-polySi 4-metal technology; A/D conversion; automatic gain control; compact digital active pixel sensor; dark current compensation; digital I/O interface; fixed pattern noise; hybrid CMOS imagers; input capacitance compensation; mixed integration; self-biased topology; speed reduction; CMOS image sensors; CMOS technology; Capacitive sensors; Chemical technology; Dark current; Integrated circuit interconnections; Parasitic capacitance; Pixel; Sensor arrays; Signal processing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
  • Conference_Location
    New Orleans, LA
  • Print_ISBN
    1-4244-0920-9
  • Electronic_ISBN
    1-4244-0921-7
  • Type

    conf

  • DOI
    10.1109/ISCAS.2007.378766
  • Filename
    4253272