DocumentCode
465498
Title
DC Correct Operation in MOBILE Inverters
Author
Quintana, José M. ; Avedillo, María J. ; Núñez, Juan
Author_Institution
Univ. de Sevilla, Sevilla
Volume
1
fYear
2006
fDate
6-9 Aug. 2006
Firstpage
479
Lastpage
483
Abstract
The verification of an appropriate DC behavior is essential before analyzing other aspects of the operation of a circuit. This paper analyses the case of MOBILE inverters and determines the relations that circuit representative parameters (such as the relation of the ratio of gate width to the gate length of the HFET, and the area factors in the RTDs) must verify to obtain a MOBILE inverter which operates correctly. The difficulty of an analytical study has been overcome by resorting to series expansions for both the RTD and the HFET I-V characteristics in the points of interest, so obtaining simplified descriptions for describing these behaviors.
Keywords
high electron mobility transistors; logic gates; resonant tunnelling diodes; HFET I-V characteristics; MOBILE inverters; RTD; dc correct operation; monostable-bistable logic element; resonant tunnelling diodes; Current density; Driver circuits; HEMTs; Inverters; Logic devices; MODFETs; Microwave integrated circuits; Resonant tunneling devices; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2006. MWSCAS '06. 49th IEEE International Midwest Symposium on
Conference_Location
San Juan
ISSN
1548-3746
Print_ISBN
1-4244-0172-0
Electronic_ISBN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2006.382103
Filename
4267180
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