• DocumentCode
    465498
  • Title

    DC Correct Operation in MOBILE Inverters

  • Author

    Quintana, José M. ; Avedillo, María J. ; Núñez, Juan

  • Author_Institution
    Univ. de Sevilla, Sevilla
  • Volume
    1
  • fYear
    2006
  • fDate
    6-9 Aug. 2006
  • Firstpage
    479
  • Lastpage
    483
  • Abstract
    The verification of an appropriate DC behavior is essential before analyzing other aspects of the operation of a circuit. This paper analyses the case of MOBILE inverters and determines the relations that circuit representative parameters (such as the relation of the ratio of gate width to the gate length of the HFET, and the area factors in the RTDs) must verify to obtain a MOBILE inverter which operates correctly. The difficulty of an analytical study has been overcome by resorting to series expansions for both the RTD and the HFET I-V characteristics in the points of interest, so obtaining simplified descriptions for describing these behaviors.
  • Keywords
    high electron mobility transistors; logic gates; resonant tunnelling diodes; HFET I-V characteristics; MOBILE inverters; RTD; dc correct operation; monostable-bistable logic element; resonant tunnelling diodes; Current density; Driver circuits; HEMTs; Inverters; Logic devices; MODFETs; Microwave integrated circuits; Resonant tunneling devices; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2006. MWSCAS '06. 49th IEEE International Midwest Symposium on
  • Conference_Location
    San Juan
  • ISSN
    1548-3746
  • Print_ISBN
    1-4244-0172-0
  • Electronic_ISBN
    1548-3746
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2006.382103
  • Filename
    4267180