• DocumentCode
    466646
  • Title

    A Gain Control Low Power CMOS Power Amplifier for Ultra Wideband Applications

  • Author

    Reed, Jack C. ; Aghahassan, Houshang Amir ; Chi, Jane ; Yen, Albert

  • Author_Institution
    UMC, Sunnyvale
  • fYear
    2006
  • fDate
    25-28 June 2006
  • Firstpage
    195
  • Lastpage
    199
  • Abstract
    This paper presents a gain control, low power, wideband power amplifier operating in the lower band frequency of 3.1 GHz to 4.8 GHz for UWB applications. This design was implemented in UMC 0.13 mum MMRF CMOS technology with an on-chip transformer and biasing circuitry. This PA works in the class A region and has high linearity with power consumption as low as 32 mV from a 1.2 V supply voltage. The differential common-source with single ended output topology provides a good isolation and good matching to 50 Omega at the output port. This PA delivers a total gain of 16 dB with a 2 dB step level for on-chip gain control circuitry.
  • Keywords
    CMOS integrated circuits; gain control; low-power electronics; power amplifiers; transformers; wideband amplifiers; MMRF CMOS technology; biasing circuitry; frequency 3.1 GHz to 4.8 GHz; gain 16 dB; low power CMOS power amplifier; on-chip gain control circuitry; on-chip transformer; size 0.13 mum; ultra wideband applications; voltage 1.2 V; wideband power amplifier; Broadband amplifiers; CMOS technology; Circuit topology; Energy consumption; Gain control; Linearity; Radio frequency; Radiofrequency amplifiers; Transceivers; Ultra wideband technology; CMOS; RF transceivers; Radio Frequency (RF); UWB; low power; power amplifier (PA);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 2006 16th Biennial
  • Conference_Location
    San Jose, CA
  • ISSN
    0749-6877
  • Print_ISBN
    1-4244-0267-0
  • Type

    conf

  • DOI
    10.1109/UGIM.2006.4286381
  • Filename
    4286381