DocumentCode
466646
Title
A Gain Control Low Power CMOS Power Amplifier for Ultra Wideband Applications
Author
Reed, Jack C. ; Aghahassan, Houshang Amir ; Chi, Jane ; Yen, Albert
Author_Institution
UMC, Sunnyvale
fYear
2006
fDate
25-28 June 2006
Firstpage
195
Lastpage
199
Abstract
This paper presents a gain control, low power, wideband power amplifier operating in the lower band frequency of 3.1 GHz to 4.8 GHz for UWB applications. This design was implemented in UMC 0.13 mum MMRF CMOS technology with an on-chip transformer and biasing circuitry. This PA works in the class A region and has high linearity with power consumption as low as 32 mV from a 1.2 V supply voltage. The differential common-source with single ended output topology provides a good isolation and good matching to 50 Omega at the output port. This PA delivers a total gain of 16 dB with a 2 dB step level for on-chip gain control circuitry.
Keywords
CMOS integrated circuits; gain control; low-power electronics; power amplifiers; transformers; wideband amplifiers; MMRF CMOS technology; biasing circuitry; frequency 3.1 GHz to 4.8 GHz; gain 16 dB; low power CMOS power amplifier; on-chip gain control circuitry; on-chip transformer; size 0.13 mum; ultra wideband applications; voltage 1.2 V; wideband power amplifier; Broadband amplifiers; CMOS technology; Circuit topology; Energy consumption; Gain control; Linearity; Radio frequency; Radiofrequency amplifiers; Transceivers; Ultra wideband technology; CMOS; RF transceivers; Radio Frequency (RF); UWB; low power; power amplifier (PA);
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 2006 16th Biennial
Conference_Location
San Jose, CA
ISSN
0749-6877
Print_ISBN
1-4244-0267-0
Type
conf
DOI
10.1109/UGIM.2006.4286381
Filename
4286381
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