Frequency Multiplier Design Based on Multiple-Peak R-BJT-NDR Devices Fabricated by SiGe Technology

Author

Liang, Dong-Shong ; Gan, Kwang-Jow ; Tu, Chun-Da ; Tsai, Cher-Shiung ; Chen, Yaw-Hwang

Author_Institution

Kun Shan Univ., Tainan County

fYear

2006

fDate

25-28 June 2006

Firstpage

221

Lastpage

224

Abstract

The negative differential resistance (NDR) device studied in this work is composed of the resistors (R) and bipolar junction transistors (BJT) devices. We regard this NDR device as R-BJT-NDR. Comparing to the resonant tunneling diode (RTD), this novel NDR device is made of resistors and transistors. Therefore, we can fabricate this NDR device by standard Si-based CMOS or SiGe-based BiCMOS process. A circuit with two NDR. regions is obtained by combining two R-BJT-NDR devices in vertical integration. We can obtain two-peak I-V characteristics in the combined circuit. Circuit fabricated from the combination exhibits three stable operating points for frequency multiplier that can multiply the input signal frequency by three. The R-BJT-NDR device and frequency multiplier are implemented by the standard 0.35 mum SiGe BiCMOS process.

Keywords

CMOS integrated circuits; Ge-Si alloys; frequency multipliers; heterojunction bipolar transistors; negative resistance devices; resistors; resonant tunnelling diodes; semiconductor materials; Si-based CMOS process; SiGe technology; SiGe-based BiCMOS process; bipolar junction transistors; frequency multiplier design; multiple-peak R-BJT-NDR devices; negative differential resistance; resistors; resonant tunneling diode; BiCMOS integrated circuits; CMOS logic circuits; CMOS process; Frequency; Germanium silicon alloys; Resistors; Resonant tunneling devices; Semiconductor diodes; Silicon germanium; Voltage; 0.35??m SiGe BiCMOS process; R-BJT-NDR device; frequency multiplier; negative differential resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 2006 16th Biennial

Conference_Location

San Jose, CA

ISSN

0749-6877

Print_ISBN

1-4244-0267-0

Type

conf

DOI

10.1109/UGIM.2006.4286386

Filename

4286386