Proper Frequencies of a Rectangular Resonator with Multilayer Semiconductor Cylinder Heterogeneity

Microwave technique development is connected with semiconductors parameters and design perfection. Semiconductor devices are successfully used in a range from meter up to sub-millimeter waves. Their advantages are: high speed of response, small size and mass, low control power. In the given paper the calculation of a rectangular resonator with a double-layer semiconductor element parameters is done by the method of integral equations of microscopic electrodynamics. This method enables to take into account both a semiconductor element parameters and its geometric form and a sandwich structure. As mathematical model the resonator containing two-layer semiconductor element of a cylinder shape with given dielectric permitivities and each layer specific conductivity was chosen.