DocumentCode
468874
Title
Quantum, Power, & Compound Semiconductors - Ultra High Speed SiGe and InP-based HBTs
Author
Ghione, Giovanni ; Ida, Minoru
Author_Institution
Politecnico di Torino
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
649
Lastpage
649
Keywords
CMOS technology; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Laboratories; Paper technology; Photonics; Silicon germanium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location
Washington, DC
Print_ISBN
978-1-4244-1507-6
Electronic_ISBN
978-1-4244-1508-3
Type
conf
DOI
10.1109/IEDM.2007.4419027
Filename
4419027
Link To Document