More-than-Universal Mobility in Double-Gate SOI p-FETs with Sub-10-nm Body Thickness -Role of Light-Hole Band and Compatibility with Uniaxial Stress Engineering

Author

Kobayashi, Shigeki ; Saitoh, Masumi ; Uchida, Ken

Author_Institution

Toshiba Corp., Yokohama

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

707

Lastpage

710

Abstract

Hole mobility (mu_h) enhancement by double gate (DG) mode in (001)/<110> ultrathm-body SOI pFETs with sub-10nm SOI thickness (T_SOL) is investigated. It is found mu_h in DG mode (mu_DG) is greatly enhanced in all the measured T_SOL in comparison with single gate mode. mu_DG of sub-10 nm T_SOI exceeds even the universal mobility at high surface carrier densities. The higher mu_DG is attributed to average effective mass reduction due to a population increase in the light hole band. Subband calculations confirm this model. It is also demonstrated that higher mu_DG is further enhanced by uniaxial stress.

Keywords

carrier density; hole mobility; insulated gate field effect transistors; silicon-on-insulator; Si-SiO₂; average effective mass reduction; double-gate SOI p-FET; high surface carrier densities; hole mobility enhancement; light-hole band; size 10 nm; subband calculations; ultrathin-body SOI pFET; uniaxial stress engineering; universal mobility; Charge carrier density; Degradation; Density measurement; Effective mass; Electronic mail; FETs; Laboratories; Large scale integration; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4419044

Filename

4419044