TlBr gamma-ray spectrometers using the depth sensitive single polarity charge sensing technique

Author

Hitomi, Keitaro ; Onodera, Toshiyuki ; Shoji, Tadayoshi ; Hiratate, Yukio ; He, Zhong

Author_Institution

Tohoku Inst. of Technol., Sendai

Volume

3

fYear

2007

fDate

Oct. 26 2007-Nov. 3 2007

Firstpage

1908

Lastpage

1913

Abstract

Pixellated thallium bromide (TIBr) gamma-ray spectrometers were fabricated and evaluated with the depth sensitive single polarity charge sensing technique. The detectors exhibited energy resolutions of 2.22%, 1.22% and 1.11% for 356 keV, 662 keV and 1.33 MeV, respectively, at room temperature. Direct measurements of electron mobility-lifetime products in TIBr detectors were performed. An electron mobility-lifetime product of 4.1 times 10^-3 cm²/V was obtained from a TIBr detector.

Keywords

electron mobility; gamma-ray detection; gamma-ray spectrometers; semiconductor counters; compound semiconductor; depth sensitive single polarity charge sensing technique; electron mobility-lifetime products; electron volt energy 1.33 MeV; electron volt energy 356 keV; electron volt energy 662 keV; energy resolutions; gamma-ray spectrometers; pixellated thallium bromide detectors; temperature 293 K; temperature 298 K; Anodes; Cathodes; Crystalline materials; Detectors; Electron mobility; Energy resolution; Furnaces; Intelligent systems; Spectroscopy; Telephony;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE

Conference_Location

Honolulu, HI

ISSN

1095-7863

Print_ISBN

978-1-4244-0922-8

Electronic_ISBN

1095-7863

Type

conf

DOI

10.1109/NSSMIC.2007.4436529

Filename

4436529