Characteristics of CVD diamond film detectors for pulsed radiation detection

Author

Wang, Lan ; Ouyang, Xiaoping ; Fan, Ruyu ; Jin, Yongjie ; Zhang, Zhongbing ; Pan, Hongbo ; Linyue Liu

Author_Institution

Tsinghua Univ., Beijing

Volume

2

fYear

2007

fDate

Oct. 26 2007-Nov. 3 2007

Firstpage

1507

Lastpage

1510

Abstract

Two CVD diamond film detectors with different film quality were made and their properties aiming at pulsed radiation detection were tested and discussed. It has been found that the properties of CVD diamond film detectors are affected seriously by diamond qualities. Impurities, defects, and crystal boundaries which cause traps in diamond increase the dark current, and make charge collection efficiency lower and time response slower. The time response and radiation hardness of CVD diamond film detectors are much better than that of Si-PIN detectors. All the result shows that a diamond film detector with high quality diamond is a much better alternative of Si-PIN detector in pulsed radiation detection.

Keywords

chemical vapour deposition; crystal defects; dark conductivity; diamond; electron traps; elemental semiconductors; hole traps; impurities; radiation effects; semiconductor counters; semiconductor thin films; CVD diamond film detectors; Si-PIN detectors; crystal boundaries; crystal defects; crystal impurities; dark current; electrons traps; hole traps; pulsed radiation detection; radiation hardness; Dark current; Face detection; Particle beams; Radiation detectors; Semiconductor films; Semiconductor impurities; Semiconductor materials; Telephony; Testing; Time factors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE

Conference_Location

Honolulu, HI

ISSN

1095-7863

Print_ISBN

978-1-4244-0922-8

Electronic_ISBN

1095-7863

Type

conf

DOI

10.1109/NSSMIC.2007.4437285

Filename

4437285