Characteristics of N-Face InGaN Light-Emitting Diodes With p-Type InGaN/GaN Superlattice

The N-face blue InGaN/GaN light-emitting diodes (LEDs) with specific design of p-type InGaN/GaN superlattice (SL) are investigated numerically, and the Ga-face LED with the same structure is simultaneously simulated for comparison. The proposed N-face LED with p-InGaN/GaN SL exhibits significant improvement for the light output power and carrier injection efficiency when the applied voltage surpasses certain value compared with the Ga-face LED with p-InGaN/GaN SL. The enhanced performance for N-face LED is explained by the simulated energy band diagrams, distribution of electric field, carrier concentration, and radiative recombination rate in the quantum wells.