Integrated Schottky-Contact in 2-Layer Inductive Grid Array

A structure is proposed where Schottky barrier diodes are integrated in a double-layer inductive grid array. The capacitance-voltage dependence of the integrated Schottky barrier diodes is the key element in the desired microwave behaviour of the structure. A theoretical investigation has been carried out. An equivalent full wave approach is proposed to account for the presence of the Schottky contact in the structure through the excess capacitance and an effective dielectric constant. A plasma analysis model (use of complex dielectric constant of the plasma) is given as well to account for high current conditions.