Title :
Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFETs
Author :
Khakifirooz, A. ; Kangguo Cheng ; Loubet, N. ; Nagumo, Toshiharu ; Reznicek, Alexander ; Qing Liu ; Levin, Theodore M. ; Edge, Lisa F. ; Hong He ; Kuss, James ; Allibert, F. ; Bich-Yen Nguyen ; Doris, B. ; Shahidi, Ghavam
Author_Institution :
IBM Res., Albany, NY, USA
Abstract :
We report experimental data comparing aggressively scaled SiGe channel extremely thin SOI MOSFETs with either relaxed or strained channels. The analysis clearly demonstrates that without strain, SiGe channel delivers performance comparable with relaxed Si devices. Significantly higher performance is observed only in compressively strained SiGe channel devices, especially in narrower devices where the transverse component of the strain is partially relaxed.
Keywords :
Ge-Si alloys; MOSFET; hole mobility; internal stresses; semiconductor materials; silicon-on-insulator; SiGe; compressively strained SiGe channel devices; extremely thin SOI MOSFET; hole transport; relaxed SiGe channel; strain transverse component; Logic gates; MOSFET; Performance evaluation; Silicon; Silicon germanium; Strain; Very large scale integration; SiGe; extremely thin SOI; fully depleted SOI; hole mobility; hole velocity;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2281501
