Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFETs

Author

Khakifirooz, A. ; Kangguo Cheng ; Loubet, N. ; Nagumo, Toshiharu ; Reznicek, Alexander ; Qing Liu ; Levin, Theodore M. ; Edge, Lisa F. ; Hong He ; Kuss, James ; Allibert, F. ; Bich-Yen Nguyen ; Doris, B. ; Shahidi, Ghavam

Author_Institution

IBM Res., Albany, NY, USA

Volume

34

Issue

11

fYear

2013

fDate

Nov. 2013

Firstpage

1358

Lastpage

1360

Abstract

We report experimental data comparing aggressively scaled SiGe channel extremely thin SOI MOSFETs with either relaxed or strained channels. The analysis clearly demonstrates that without strain, SiGe channel delivers performance comparable with relaxed Si devices. Significantly higher performance is observed only in compressively strained SiGe channel devices, especially in narrower devices where the transverse component of the strain is partially relaxed.

Keywords

Ge-Si alloys; MOSFET; hole mobility; internal stresses; semiconductor materials; silicon-on-insulator; SiGe; compressively strained SiGe channel devices; extremely thin SOI MOSFET; hole transport; relaxed SiGe channel; strain transverse component; Logic gates; MOSFET; Performance evaluation; Silicon; Silicon germanium; Strain; Very large scale integration; SiGe; extremely thin SOI; fully depleted SOI; hole mobility; hole velocity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2281501

Filename

6627972