Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory

Author

Tian-Jian Chu ; Tsung-Ming Tsai ; Ting-Chang Chang ; Kuan-Chang Chang ; Rui Zhang ; Kai-Huang Chen ; Jung-Hui Chen ; Tai-Fa Young ; Jen-Wei Huang ; Jen-Chung Lou ; Min-Chen Chen ; Syuan-Yong Huang ; Hsin-Lu Chen ; Yong-En Syu ; Dinghua Bao ; Life, Simon M

Author_Institution

Dept. of Mater. & Optoelectron. Sci., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

Volume

35

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

217

Lastpage

219

Abstract

In this letter, the special role of hydrogen ions in hafnium doped silicon oxide resistive random access memory (RRAM) is presented. In addition to the more typical oxygen ion-dominated resistive switching, hydrogen ions were also observed to trigger a resistance transformation phenomenon, producing a tri-resistive device. Unlike a normal RRAM device, a hydrogen plasma-treated device is operated with a reversed voltage polarity, and the direction of hydrogen ion migration results in the chemical bonds breaking and repairing. By changing the voltage polarity and stop voltage, this tri-resistive behavior can be achieved. This particular hydrogen-induced switching behavior suggests a different RRAM switching mechanism and is finally explained by our model.

Keywords

hydrogen ions; plasma materials processing; random-access storage; switching circuits; RRAM switching mechanism; hafnium doped silicon oxide RRAM; hydrogen ion migration; hydrogen ions; hydrogen plasma-treated device; hydrogen-induced switching behavior; resistance transformation phenomenon; resistive random access memory; reversed voltage polarity; stop voltage; triresistive device; Educational institutions; Hydrogen; Ions; Plasmas; Resistance; Silicon; Switches; RRAM; hydrogen; resistive switching; tri-resistive states;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2295378

Filename

6701322