Title :
Optimization of Functional Parameters of Magnetoresistive Fe20Ni80/Fe50Mn50/Fe20Ni80 Films
Author :
Yuvchenko, A.A. ; Lepalovskij, V.N. ; Savin, P.A. ; Gorkovenko, A.N. ; Kulesh, N.A. ; Vas´kovskiy, V.O.
Author_Institution :
Dept. of Magn. & Magn. Nanomater., Ural Fed. Univ., Yekaterinburg, Russia
Abstract :
In this paper, the effect of some technological and physical factors on properties of SiO2/Ta/Fe20Ni80/Fe50Mn50 and SiO2/Ta/Fe20Ni80/Fe50Mn50/Fe20Ni80/Ta films, having the anisotropic magnetoresistance (AMR) effect, was investigated. The purpose of this paper was to find the optimum conditions for realization of the peak magnetic biasing in thick (>30 nm) permalloy layers. Essential influence of the protective Ta layer on the achievement of the optimal combination of properties of multilayer AMR films with exchange coupling is shown. Dependences of the exchange bias field (Hex) and maximum derivation of resistance with respect to magnetic field (dR/dH)max on the thickness of functional permalloy layers are investigated. The preproduction prototypes of a sensor are produced and sensor transformation function is investigated.
Keywords :
Permalloy; enhanced magnetoresistance; exchange interactions (electron); iron alloys; magnetic multilayers; magnetic thin films; manganese alloys; nickel alloys; Fe20Ni80-Fe50Mn50-Fe20Ni80; anisotropic magnetoresistance effect; exchange bias field; exchange coupling; functional parameter; functional permalloy layer; magnetic biasing; magnetic field; magnetoresistive film; multilayer AMR films; physical factor; protective Ta layer; sensor transformation function; technological factor; thick permalloy layer; Annealing; Magnetic multilayers; Magnetoresistance; Manganese; Perpendicular magnetic anisotropy; Substrates; Anisotropic magnetoresistance (AMR); exchange bias; magnetic films; magnetic sensors;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2014.2362817
