DocumentCode
472640
Title
Electrical and Microstructural Investigation into the Effect of Arsenic Emitter Concentration on the Enhanced Gain Polysilicon Emitter Bipolar Transistor
Author
Wilson, M.C. ; Hunt, P.C. ; Jorgensen, N. ; Booker, G.R.
Author_Institution
Plessey Research(Caswell)Ltd., Caswell, Towcester, Northants, England, NN12 8EQ
fYear
1985
fDate
14-16 May 1985
Firstpage
46
Lastpage
47
Keywords
Annealing; Bipolar transistors; Electrical resistance measurement; Grain size; Hafnium; Ion implantation; Microstructure; Oxidation; Rough surfaces; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location
Kobe, Japan
Print_ISBN
4-930813-09-3
Type
conf
Filename
4480296
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