Solid-II; High-Voltage, High-Gain Ka-Channel-Length CMOSFETs Using Silicide with Selfaligned Ultra-Shallow (3S) Junction

Author

Horiuchi, Masatada

Author_Institution

Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan

fYear

1985

fDate

14-16 May 1985

Firstpage

Lastpage

Keywords

Boron; CMOSFETs; Conductivity; Contact resistance; Laboratories; Measurement errors; Silicidation; Silicides; Surface resistance; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1985. Digest of Technical Papers. Symposium on

Conference_Location

Kobe, Japan

Print_ISBN

4-930813-09-3

Type

Filename

4480301

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