• DocumentCode
    472647
  • Title

    A Nitride-Isolated Molybdenum-Polysilicon Gate Electrode

  • Author

    Ito, T. ; Horie, H. ; Fukano, T. ; Ishikawa, H.

  • Author_Institution
    Fujitsu Laboratories Ltd. 1677 Ono, Atsugi, 243-01 Japan
  • fYear
    1985
  • fDate
    14-16 May 1985
  • Firstpage
    60
  • Lastpage
    61
  • Abstract
    A low resistive MTP gate electrode has been developed for MOS VLSIs. The MTP gate features are as follows: 1) The resistivity of the electrode is reduced by about two orders of magnitude below that of poly Si even after annealing at 1100°C.
  • Keywords
    Conductivity; Diodes; Electrodes; FETs; Optical films; Semiconductor films; Temperature; Threshold voltage; Tunneling; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1985. Digest of Technical Papers. Symposium on
  • Conference_Location
    Kobe, Japan
  • Print_ISBN
    4-930813-09-3
  • Type

    conf

  • Filename
    4480303
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472647