DocumentCode
472664
Title
Deep Trench Well Isolation for 256Kb 6T CMOS Static RAM
Author
Hashimoto, Kazuhiko ; Yokogawa, Shunji ; Kakumu, Masakazu ; Kinugawa, Kasaaki ; Sawada, Kazuhiro ; Sakurai, Takayasu ; Isobe, Mitsuo ; Matsunaga, Jun-Ichi ; Iizuka, Tetsuya ; Nagakubo, Yoshihide
Author_Institution
Semiconductor Device Engineering Lab., Toshiba Corporation, Komukai-Toshiba-cho, Kawasaki, 210 Japan
fYear
1985
fDate
14-16 May 1985
Firstpage
94
Lastpage
95
Keywords
CMOS integrated circuits; CMOS technology; Filling; Isolation technology; Leakage current; Read-write memory; Semiconductor devices; Stress; Substrates; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location
Kobe, Japan
Print_ISBN
4-930813-09-3
Type
conf
Filename
4480320
Link To Document