DocumentCode

472671

Title

Effects of Device Processing on Hot-Electron Induced Device Degradation

Author

Hsu, Fu-Chiell ; Chiu, Kuanig Yi

Author_Institution

Hewlett-Packard Laboratories Palo Alto, CA 94304

fYear

1985

fDate

14-16 May 1985

Firstpage

108

Lastpage

109

Keywords

Annealing; Degradation; Electrons; Etching; Hydrogen; MOSFET circuits; Passivation; Plasma applications; Plasma devices; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1985. Digest of Technical Papers. Symposium on

Conference_Location

Kobe, Japan

Print_ISBN

4-930813-09-3

Type

conf

Filename

4480327