DocumentCode :
472683
Title :
Analysis of Submicron MOS Device Characteristics Using a Composite Full Three-Dimensional Process/Device Simulation System
Author :
Onga, S. ; Shigyo, N. ; Yoshimi, M. ; Taniguchi, K.
Author_Institution :
VLSI Research Center, Toshiba Corporation Kawasaki 210 Japan
fYear :
1986
fDate :
28-30 May 1986
Firstpage :
15
Lastpage :
16
Keywords :
Analytical models; Circuit simulation; DC generators; Degradation; Doping; Impact ionization; Impurities; MOS devices; MOSFETs; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
Type :
conf
Filename :
4480347
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472683
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