Title :
Epitaxial SiC Emitter for High Speed Bipolar VLSIs
Author :
Sugii, T. ; Ito, T. ; Furumura, Y. ; Doki, M. ; Mieno, F. ; Maeda, M.
Author_Institution :
Fujitsu Laboratories Ltd. Atsugi 243-01, Japan
Keywords :
Annealing; Charge carrier processes; Conductivity; Current-voltage characteristics; Diodes; Epitaxial growth; Heterojunctions; Silicon carbide; Temperature; Very large scale integration;
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
