A Hot Carrier Analysis Utilizing MINIMOS 3.0

Author

Hänsch, W. ; Werner, C. ; Selberherr, S.

Author_Institution

Siemens AG, Central Research and Development, Microelectronics Otto-Hahn-Ring 6, D-8000 Munich 83, FRG

fYear

1986

fDate

28-30 May 1986

Firstpage

Lastpage

Keywords

Charge carrier density; Current density; Doping; Electrons; Equations; Hot carriers; Impact ionization; Substrates; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1986. Digest of Technical Papers. Symposium on

Conference_Location

San Diego, CA, USA

Type

Filename

4480371

Link To Document