DocumentCode
472743
Title
Hot-Carrier Degradation Mechanism under AC Stress in MOSFET´s
Author
Igura, Yasuo ; Takeda, Eiji
Author_Institution
Central Research Laboratory, Hitachi Ltd. Kokubunji, Tokyo 185, Japan
fYear
1987
fDate
22-23 May 1987
Firstpage
47
Lastpage
48
Keywords
Degradation; Electrical resistance measurement; Electron traps; Hot carriers; Passivation; Pulse measurements; Pulse modulation; Stress; Timing; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location
Karuizawa, Japan
Type
conf
Filename
4480415
Link To Document