Formation of Si-on-Insulator Structure by Lateral Solid Phase Epitaxial Growth with Local P-Doping

Author

Moniwa, K. ; Miyao, K. ; Warabisako, T. ; Kusukawa, K. ; Murakami, E. ; Shukuri, S.

Author_Institution

Central Research Laboratory, Hitachi Ltd. Kokubunji. Tokyo 185, Japan

fYear

1987

fDate

22-23 May 1987

Firstpage

Lastpage

Keywords

Amorphous materials; Annealing; Crystallization; Doping; Epitaxial growth; Raman scattering; Semiconductor films; Spectroscopy; Stress; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1987. Digest of Technical Papers. Symposium on

Conference_Location

Karuizawa, Japan

Type

Filename

4480436

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