DocumentCode
472765
Title
A High Density 4Mbit DRAM Process Using a Fully Overlapping Bitline Contact (FOBIC) Trench Cell
Author
Küsters, K.H. ; Enders, G. ; Meyberg, W. ; Benzinger, H. ; Hasler, B. ; Higelin, G. ; Röhl, S. ; Mühlhoff, H.M. ; Müller, W.
Author_Institution
Corporate Research and Technology, Techn. Center for Microelectronics Siemens AG, Otto-Hahn-Ring 6, D-8000 Munich 83, West Germany
fYear
1987
fDate
22-23 May 1987
Firstpage
93
Lastpage
94
Keywords
Anisotropic magnetoresistance; Capacitance; Dielectrics and electrical insulation; Diodes; Dry etching; Electrons; Leakage current; Random access memory; Stress; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location
Karuizawa, Japan
Type
conf
Filename
4480438
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