Title :
A Band-to-Band Tunneling Effect in the Trench Transistor Cell
Author :
Banerjee, Sanjay ; Coleman, Jim ; Richardson, Bill ; Shah, Ashwin
Author_Institution :
Semiconductor Process and Design Center Texas Instruments Inc. Dallas. Texas 75265
Keywords :
Boron; Capacitors; Doping; Etching; Leakage current; Plugs; Substrates; Testing; Tunneling; Voltage;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
